5 SIMPLE TECHNIQUES FOR GERMANIUM

≤ 0.fifteen) is epitaxially developed over a SOI substrate. A thinner layer of Si is developed on this SiGe layer, and then the composition is cycled by means of oxidizing and annealing levels. Due to preferential oxidation of Si about Ge [sixty eight], the initial Si1–Nghiên cứu của FDA đưa ra kết luận rằng germani, khi sử đụ